Physics Of Semiconductor Devices Av Simon M. (bell Laboratories Inc.) Sze, Yiming Li, Kwok K. (bell Laboratories Lucent Technologies Murray Hill New J
<p><b>The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices </b></p><p>The Fourth Edition of <i>Physics of Semiconductor Devices</i> remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. </p><p>Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field
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